1) Haʻahaʻa ka nui.
2) Ke kūpaʻa ʻana i ka palaho.
3) Ke kū'ē ʻana i ke komo ʻana.
4) Ke kū'ē ʻana i ka ʻokikene.
5) Ke kūpaʻa ʻana i ka ʻānai ʻana.
6) Kū'ē maika'i i ka ha'alulu wela (ma muli o ke koina ho'onui wela ha'aha'a a me ke alaka'i wela ki'eki'e).
7) Ikaika maikaʻi loa i ka mahana kiʻekiʻe.
8) Ka mana maikaʻi o nā ʻano paʻakikī.
Nā huahana kūpaʻa i ke komo ʻana: Papa silikona carbide, pōhaku lepo silikona carbide, uhi paipu, Cone paipu, cyclone, a pēlā aku.
Nā lako umu: Papa, Kukui, Roller, Nozzle Burner, Kukui poepoe, kukui huinaha, kukui puka. Crucible, Sagger, a pēlā aku.
Nā mea ʻē aʻe: Nā nozzles desulfurization
Ka Hoʻohana ʻana o ka Reaction Bonded Silicon Carbide:
Ua hōʻoia ʻia ka silicon carbide i hoʻopaʻa ʻia i ka hopena he koho mea maikaʻi loa ia no nā noi komo e like me nā liners paipu, nā nozzles, nā chokes kaohi kahe a me nā ʻāpana komo nui aʻe i ka hana mining a me nā ʻoihana ʻē aʻe.
| Nā Waiwai | Nā ʻĀpana | ʻO SiSiC/RBSIC |
| Ka nui o ka nui (SiC) | V01% | ≥85 |
| Ka nui o ka nui | g/cm3 | 3.01 |
| Ka porosity i ʻike ʻia | % | <0.1 |
| Modulus o ka haki ʻana ma 20 ℃ | Mpa | 250 |
| Modulus o ka haki ʻana ma 1200 ℃ | Mpa | 280 |
| Modulus o ka elasticity ma 20 ℃ | GPA | 330 |
| Paʻakikī o ka haki | Mpa*m1/2 | 3.3 |
| Ka hoʻokele wela ma 1200 ℃ | wm-1.k-1 | 45 |
| Hoʻonui wela ma 1200 ℃ | a×10-6/℃ | 4.5 |
| Ke kūpaʻa haʻalulu wela ma 1200 ℃ | Maikaʻi loa | |
| Ka helu o ka hoʻolaha wela | <0.9 | |
| Mahana hana kiʻekiʻe loa | ℃ | 1350 |
hiki ke hoʻopilikino ʻia e like me nā koi o ka mea kūʻai aku.
Ke ʻae nei mākou i nā kauoha maʻamau.
Inā makemake ʻoe e ʻike i ka ʻike huahana hou aku, e ʻoluʻolu e hoʻokaʻaʻike mai iā mākou a e hāʻawi mākou iā ʻoe i ka huahana kūpono loa a me ka lawelawe maikaʻi loa!