1) Haʻahaʻa haʻahaʻa.
2) Ke kū'ē i ka corrosion.
3) Hoʻopaʻa kūʻē.
4) Kū'ē kū'ē.
5) Kūʻē abrasion.
6) Kūleʻa haʻalulu maikaʻi (ma muli o ka helu hoʻonui haʻahaʻa haʻahaʻa a me ka conductivity thermal kiʻekiʻe).
7) Ka ikaika maikaʻi loa i ka wela kiʻekiʻe.
8) Ka hoʻomalu dimensional maikaʻi o nā ʻano paʻakikī.
Hoʻohana i nā huahana pale: Silicon carbide plate, Silicon carbide brick, Pipe lining, Pipe Cone, cyclone, etc.
Nā lako Kiln: Plate, Beam, Roller, Burner Nozzle, Round beam, square beam, hole beam.Crucible, Sagger, etc.
Nā mea ʻē aʻe: Desulfurization nozzles
Hoʻohana i ka Reaction Bonded Silicon Carbide:
Ua hōʻike ʻia ʻo Reaction bonded silicon carbide he koho waiwai maikaʻi loa no ka hoʻohana ʻana i nā noi e like me nā pipe liners, Nozzles, kahe kahe kahe a me nā ʻāpana lole nui i ka mining a me nā ʻoihana ʻē aʻe.
Waiwai | Units | SiSiC/RBSIC |
ʻAno nui (SiC) | V01% | ≥85 |
ʻAno nui | g/cm3 | 3.01 |
ʻIke ʻia ka porosity | % | <0.1 |
Modulus o ka rupture ma 20 ℃ | Mpa | 250 |
Modulus o ka rupture ma 1200 ℃ | Mpa | 280 |
Modulus o ka elasticity ma 20 ℃ | Gpa | 330 |
ʻOoleʻa haʻihaʻi | Mpa*m1/2 | 3.3 |
ʻO ka Thermal Conductivity ma 1200 ℃ | wm-1.k-1 | 45 |
Hoʻonui wela ma 1200 ℃ | a×10-6/℃ | 4.5 |
ʻO ke kūpaʻa haʻalulu wela ma 1200 ℃ | Maikaʻi loa | |
Coefficient o ka hahana wela | <0.9 | |
Max.pāhana hana | ℃ | 1350 |
hiki ke hoʻopilikinoʻia e like me nā koi o ka mea kūʻai.
ʻAe mākou i nā kauoha maʻamau.
Inā makemake ʻoe e ʻike hou aku i ka ʻike huahana, e ʻoluʻolu e cotact iā mākou a hāʻawi mākou iā ʻoe i ka huahana kūpono a me ka lawelawe maikaʻi loa!